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羅斌森

  • BD435G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 4A
    Voltage - Collector Emitter Breakdown (Max) : 32V
    Vce Saturation (Max) @ Ib, Ic : 500mV @ 200mA, 2A
    Current - Collector Cutoff (Max) : 100μA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 85 @ 500mA, 1V
    Power - Max : 36W
    Frequency - Transition : 3MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-225AA, TO-126-3
    Supplier Device Package : TO-225AA

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