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羅斌森

  • BF199_J35Z

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : NPN
    Voltage - Collector Emitter Breakdown (Max) : 25V
    Frequency - Transition : 1.1GHz
    Power - Max : 350mW
    DC Current Gain (hFE) (Min) @ Ic, Vce : 38 @ 7mA, 10V
    Current - Collector (Ic) (Max) : 50mA
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Supplier Device Package : TO-92-3

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