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羅斌森

  • CSD19531Q5AT

  • Manufacturer : Texas Instruments
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Series : NexFET?
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 100A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
    Rds On (Max) @ Id, Vgs : 6.4 mOhm @ 16A, 10V
    Vgs(th) (Max) @ Id : 3.3V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 48nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 3870pF @ 50V
    Power Dissipation (Max) : 3.3W (Ta), 125W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-VSONP (5x6)
    Package / Case : 8-PowerTDFN

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