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羅斌森

  • 55GN01CA-TB-E

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : NPN
    Voltage - Collector Emitter Breakdown (Max) : 10V
    Frequency - Transition : 4.5GHz
    Noise Figure (dB Typ @ f) : 1.9dB @ 1GHz
    Gain : 9.5dB
    Power - Max : 200mW
    DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 10mA, 5V
    Current - Collector (Ic) (Max) : 70mA
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-236-3, SC-59, SOT-23-3
    Supplier Device Package : 3-CP

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