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羅斌森

  • NSVB123JPDXV6T1G

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Reel (TR)
    Part Status : Obsolete
    Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 2.2 kOhms
    Resistor - Emitter Base (R2) : 4.7 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 300μA, 10mA
    Current - Collector Cutoff (Max) : 500nA
    Power - Max : 500mW
    Package / Case : SOT-563, SOT-666
    Supplier Device Package : SOT-563

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