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羅斌森

  • NSTB60BDW1T1

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Reel (TR)
    Part Status : Obsolete
    Transistor Type : 1 NPN Pre-Biased, 1 PNP
    Current - Collector (Ic) (Max) : 150mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 22 kOhms
    Resistor - Emitter Base (R2) : 47 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V / 120 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
    Current - Collector Cutoff (Max) : 500nA
    Frequency - Transition : 140MHz
    Power - Max : 250mW
    Package / Case : 6-TSSOP, SC-88, SOT-363
    Supplier Device Package : SC-88/SC70-6/SOT-363

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