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羅斌森

  • TIS75_J35Z

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    FET Type : N-Channel
    Voltage - Breakdown (V(BR)GSS) : 30V
    Current - Drain (Idss) @ Vds (Vgs=0) : 8mA @ 15V
    Voltage - Cutoff (VGS off) @ Id : 800mV @ 4nA
    Input Capacitance (Ciss) (Max) @ Vds : 18pF @ 10V (VGS)
    Resistance - RDS(On) : 60 Ohms
    Power - Max : 350mW
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Supplier Device Package : TO-92-3

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