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  • 2SK3666-3-TB-E

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : N-Channel
    Drain to Source Voltage (Vdss) : 30V
    Current - Drain (Idss) @ Vds (Vgs=0) : 1.2mA @ 10V
    Current Drain (Id) - Max : 10mA
    Voltage - Cutoff (VGS off) @ Id : 180mV @ 1μA
    Input Capacitance (Ciss) (Max) @ Vds : 4pF @ 10V
    Resistance - RDS(On) : 200 Ohms
    Power - Max : 200mW
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-236-3, SC-59, SOT-23-3
    Supplier Device Package : 3-CP

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