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羅斌森

  • 2SJ661-1E

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Active
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 38A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
    Rds On (Max) @ Id, Vgs : 39 mOhm @ 19A, 10V
    Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 4360pF @ 20V
    Power Dissipation (Max) : 1.65W (Ta), 65W (Tc)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-262-3
    Package / Case : TO-262-3 Long Leads, I2Pak, TO-262AA

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