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  • NTZD5110NT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : 2 N-Channel (Dual)
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 294mA
    Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 500mA, 10V
    Vgs(th) (Max) @ Id : 2.5V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 0.7nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds : 24.5pF @ 20V
    Power - Max : 250mW
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : SOT-563, SOT-666
    Supplier Device Package : SOT-563

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