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羅斌森

  • NTP8G206NG

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : GaNFET (Gallium Nitride)
    Drain to Source Voltage (Vdss) : 600V
    Current - Continuous Drain (Id) @ 25°C : 17A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 8V
    Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 8V
    Vgs(th) (Max) @ Id : 2.6V @ 500μA
    Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V
    Vgs (Max) : ±18V
    Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V
    Power Dissipation (Max) : 96W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220-3
    Package / Case : TO-220-3

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