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  • NTMS5P02R2G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 3.95A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
    Rds On (Max) @ Id, Vgs : 33 mOhm @ 5.4A, 4.5V
    Vgs(th) (Max) @ Id : 1.25V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 35nC @ 4.5V
    Vgs (Max) : ±10V
    Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 16V
    Power Dissipation (Max) : 790mW (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-SOIC
    Package / Case : 8-SOIC (0.154", 3.90mm Width)

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