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羅斌森

  • 2SB1216S-E

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 4A
    Voltage - Collector Emitter Breakdown (Max) : 100V
    Vce Saturation (Max) @ Ib, Ic : 500mV @ 200mA, 2A
    Current - Collector Cutoff (Max) : 1μA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 140 @ 500mA, 5V
    Power - Max : 1W
    Frequency - Transition : 130MHz
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
    Supplier Device Package : TP

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