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  • NTMD6601NR2G

  • Manufacturer : ON Semiconductor
    Packaging : Tape & Reel (TR)
    Part Status : Obsolete
    FET Type : 2 N-Channel (Dual)
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 80V
    Current - Continuous Drain (Id) @ 25°C : 1.1A
    Rds On (Max) @ Id, Vgs : 215 mOhm @ 2.2A, 10V
    Vgs(th) (Max) @ Id : 3V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
    Input Capacitance (Ciss) (Max) @ Vds : 400pF @ 25V
    Power - Max : 600mW
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-SOIC (0.154", 3.90mm Width)
    Supplier Device Package : 8-SOIC

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