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羅斌森

  • MPS3563G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : NPN
    Voltage - Collector Emitter Breakdown (Max) : 12V
    Frequency - Transition : 1.5GHz
    Noise Figure (dB Typ @ f) : 6.5dB @ 60MHz
    Gain : 14dB @ 200MHz
    Power - Max : 350W
    DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 8mA, 10V
    Current - Collector (Ic) (Max) : 50mA
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)
    Supplier Device Package : TO-92

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