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  • MJD253-1G

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Active
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 4A
    Voltage - Collector Emitter Breakdown (Max) : 100V
    Vce Saturation (Max) @ Ib, Ic : 600mV @ 100mA, 1A
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 200mA, 1V
    Power - Max : 1.4W
    Frequency - Transition : 40MHz
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
    Supplier Device Package : I-PAK

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