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  • MJD200G

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Alternate Packaging
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 5A
    Voltage - Collector Emitter Breakdown (Max) : 25V
    Vce Saturation (Max) @ Ib, Ic : 1.8V @ 1A, 5A
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 45 @ 2A, 1V
    Power - Max : 1.4W
    Frequency - Transition : 65MHz
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
    Supplier Device Package : DPAK

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