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羅斌森

  • HGT1S20N60A4S9A

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Obsolete
    Voltage - Collector Emitter Breakdown (Max) : 600V
    Current - Collector (Ic) (Max) : 70A
    Current - Collector Pulsed (Icm) : 280A
    Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 20A
    Power - Max : 290W
    Switching Energy : 105μJ (on), 150μJ (off)
    Input Type : Standard
    Gate Charge : 142nC
    Td (on/off) @ 25°C : 15ns/73ns
    Test Condition : 390V, 20A, 3 Ohm, 15V
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    Supplier Device Package : TO-263AB

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