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羅斌森

  • LND01K1-G

  • Manufacturer : Microchip Technology
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 9V
    Current - Continuous Drain (Id) @ 25°C : 330mA (Tj)
    Drive Voltage (Max Rds On, Min Rds On) : 0V
    Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 100mA, 0V
    Vgs (Max) : +0.6V, -12V
    Input Capacitance (Ciss) (Max) @ Vds : 46pF @ 5V
    FET Feature : Depletion Mode
    Power Dissipation (Max) : 360mW (Ta)
    Operating Temperature : -25°C ~ 125°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SOT-23-5
    Package / Case : SC-74A, SOT-753

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